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Volumn 80, Issue 14, 2002, Pages 2517-2519

N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

Author keywords

[No Author keywords available]

Indexed keywords

DIIMIDE; EVAPORATED FILMS; FIELD-EFFECT MOBILITIES; LINEAR REGIME; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; ORGANIC THIN FILMS; PACKING STRUCTURE; REFLECTION MODES; SATURATION REGIME; X-RAY STUDIES;

EID: 79956057141     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467706     Document Type: Article
Times cited : (475)

References (26)
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  • 21
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    • Andreoni, W.1    Curioni, A.2
  • 22
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    • (b) [PROMET code] see, e.g., and, jch JPCHAX 0022-3654
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    • Gavezzotti, A.1    Filippini, G.2
  • 24
    • 0031207743 scopus 로고    scopus 로고
    • the carrier injection barrier at the Au/organic semiconductor interface can differ substantially from the barrier predicted by the vacuum level alignment rule at the interface, due to the quite usual formation of an electrical dipole] (a) and
    • [the carrier injection barrier at the Au/organic semiconductor interface can differ substantially from the barrier predicted by the vacuum level alignment rule at the interface, due to the quite usual formation of an electrical dipole] (a) H. Ishii and K. Seki, Proc. IEEE 44, 1295 (1997);
    • (1997) Proc. IEEE , vol.44 , pp. 1295
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  • 26
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    • (c), and, apl APPLAB 0003-6951
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.