Correlation between morphology and ambipolar transport in organic field-effect transistors

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Singh, Th B ^a   Gunes S ^a   Marjanovic N ^a   Sariciftci, N S ^a   Menon, R ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL FORMATION; CHARGE TRANSPORT; DRAIN-SOURCE ELECTRODES; NANOMORPHOLOGY;

DERIVATIVES; FULLERENES; GATES (TRANSISTOR); HOLE MOBILITY; INTERFACES (MATERIALS); MOLECULAR WEIGHT; MORPHOLOGY; POLYMER BLENDS; POLYVINYL ALCOHOLS; SEMICONDUCTING ORGANIC COMPOUNDS; SPIN COATING; THIN FILMS; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 20544447474     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929850     Document Type: Article

References (27)

1. J. A. Rogers, Proc. Natl. Acad. Sci. U.S.A. 98, 4835 (2001).
2. H. E. A. Huitema, Nature (London) 414, 599 (2001).
3. C. D. Sheraw, Appl. Phys. Lett. 80, 1088 (2002).
4. A. R. Brown, C. P. Jarret, D. M. de Leeuw, and M. Matters, Synth. Met. 88, 37 (1997).
5. B. K. Crone, A. Dodabalapur, R. Sarpeshkar, A. Gelperin, H. E. Katz, and Z. Bao, J. Appl. Phys. 91, 10140 (2001).
6. D. M. De Leew, G. H. Gelinck, T. C. T. Geuns, E. Van Veenendaal, E. Cantatore, and B. H. Huisman, Tech. Dig. - Int. Electron Devices Meet. 0163-1918 293 (2002).
7. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 82, 3964 (2003).
8. H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and Ch. Dehm, Appl. Phys. Lett. 82, 4175 (2003).
9. T. D. Anthopoulos, D. M. de Leeuw, E. Cantatore, S. Setayesh, E. J. Meijer, C. Tanase, J. C. Hummelen, and P. W. M. Blom, Appl. Phys. Lett. 85, 4205 (2004).
10. T. Yasuda, T. Goto, K. Fujita, and T. Tsutsui, Appl. Phys. Lett. 85, 2098 (2004).
11. Y. Kunugi, K. Takimiya, N. Negishi, T. Otsuo, and Y. Aso, J. Mater. Chem. 14, 2840 (2004).
12. J. Locklin, K. Shinbo, K. Onishi, F. Kaneko, Z. Bao, and R. C. Advincula, Chem. Mater. 15, 1404 (2003).
13. A. Dodabalapur, H. E. Katz, L. Torsi, and R. C. Haddon, Appl. Phys. Lett. 68, 1108 (1996).
14. C. Rost, D. J. Gundalach, S. Karg, and W. Rieß, J. Appl. Phys. 95, 5782 (2004).
15. K. Tada, H. Harada, and K. Yoshino, Jpn. J. Appl. Phys., Part 2 35, L944 (1996).
16. E. J. Meijer, Nat. Mater. 2, 678 (2003).
17. A. Babel, J. D. Wind, and S. A. Jenekhe, Adv. Funct. Mater. 14, 891 (2004).
18. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, and W. Weber, J. Appl. Phys. 92, 5259 (2002).
19. H. E. Katz, Ch. Kloc, V. Sunder, J. Zaumseil, A. L. Briseno, and Z. Bao, J. Mater. Res. 19, 1995 (2004).
20. N. Marjanović, Th. B. Singh, S. Günes, N. S. Sariciftci, R. Schwödiauer, and S. Bauer (unpublished).
21. B. Viallet, E. Daran, and L. Malaquin, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1570836 21, 766 (2003); R. S. Faibish, W. Yoshida, and Y. Cohen, J. Colloid Interface Sci. 256, 341 (2002).
22. B. Viallet, E. Daran, and L. Malaquin, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1570836 21, 766 (2003); R. S. Faibish, W. Yoshida, and Y. Cohen, J. Colloid Interface Sci. 256, 341 (2002).
23. T. D. Anthopoulos, C. Tanase, S. Setayesh, E. J. Meijer, J. C. Hummelen, P. W. M. Blom, and D. M. de Leeuw, Adv. Mater. (Weinheim, Ger.) (Weinheim, Ger.) (in press) (private communication).
24. G. W. Neudeck, H. F. Bare, and K. Y. Chung, IEEE Trans. Electron Devices ED-34, 344 (1987).
25. V. D. Mihailetchi, Adv. Funct. Mater. 13, 43 (2003).
26. G. J. Matt, N. S. Sariciftci, and T. Fromherz, Appl. Phys. Lett. 84, 1570 (2004).
27. A. Cravino and N. S. Sariciftci, Nat. Mater. 2, 360 (2003).