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Volumn 9, Issue 4, 2008, Pages 432-438

Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25 cm2/Vs

Author keywords

Neutral cluster beam deposition (NCBD); Octadecyltrichlorosilane (OTS); Organic thin film transistor; Pentacene; Temperature dependence of field effect mobility ( eff)

Indexed keywords

ELECTRODEPOSITION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; SURFACE ACTIVE AGENTS; THIN FILMS; X RAY DIFFRACTION;

EID: 44149088078     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.01.008     Document Type: Article
Times cited : (67)

References (25)
  • 15
    • 30544444194 scopus 로고    scopus 로고
    • 2 substrates as described in the text. Previously the substrates were simply cleaned by successive ultrasonic treatments in acetone, methanol and deionized water in order. Secondly, the thickness of thermally grown gate dielectric was changed from 1000 to 2000 Å. Thirdly, the channel length and width of the devices were changed from 1000 and 200 μm to 500 and 1400 μm, respectively. It was believed that all of those combined modifications increased the present device performance significantly
    • (2005) J. Phys. Chem. B. , vol.109 , pp. 23918
    • Abthagir, P.S.1    Ha, Y.-G.2    You, E.-A.3    Jeong, S.-H.4    Seo, H.-S.5    Choi, J.-H.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.