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Volumn 9, Issue 4, 2008, Pages 432-438
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Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25 cm2/Vs
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Author keywords
Neutral cluster beam deposition (NCBD); Octadecyltrichlorosilane (OTS); Organic thin film transistor; Pentacene; Temperature dependence of field effect mobility ( eff)
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Indexed keywords
ELECTRODEPOSITION;
ELECTRON MOBILITY;
FIELD EFFECT TRANSISTORS;
SURFACE ACTIVE AGENTS;
THIN FILMS;
X RAY DIFFRACTION;
NEUTRAL CLUSTER BEAM DEPOSITION (NCBD);
OCTADECYLTRICHLOROSILANE (OTS);
ORGANIC THIN-FILM TRANSISTORS;
PENTACENE;
TEMPERATURE DEPENDENCE OF FIELD-EFFECT MOBILITY;
THIN FILM TRANSISTORS;
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EID: 44149088078
PISSN: 15661199
EISSN: None
Source Type: Journal
DOI: 10.1016/j.orgel.2008.01.008 Document Type: Article |
Times cited : (67)
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References (25)
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