Hole mobility in organic single crystals measured by a "flip- crystal" field-effect technique

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2080-2086

  Goldmann, C ^a   Haas, S ^a   Krellner, C ^a   Pernstlch, K P ^a   Gundlach, D J ^a   Batlogg, B ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; ELECTRODES; FIELD EFFECT TRANSISTORS; HYSTERESIS; OXIDATION; PURIFICATION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

CHANNEL RESISTANCES; CHARGE DENSITY; FLIP-CRYSTAL TECHNIQUES; ORGANIC FIELD EFFECT TRANSISTORS (OFET); ORGANIC MOLECULAR CRYSTALS (OMC); OXIDE THICKNESS;

HOLE MOBILITY;

EID: 4344695695     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767292     Document Type: Article

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