Dual-gate pentacene organic field-effect transistors based on a nanoassembled SiO 2 nanoparticle thin film as the gate dielectric layer

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Cui, Tianhong ^a,b   Liang, Guirong ^a  

^a LOUISIANA TECH UNIVERSITY   (United States)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITY; ORGANIC FIELD-EFFECT TRANSISTORS (OFET); PENTACENE; THERMAL OXIDES;

ASSEMBLY; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; OXIDATION; SILICA; THIN FILMS;

FIELD EFFECT TRANSISTORS;

EID: 21044438650     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861126     Document Type: Article

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