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t or mobility, an indication that the effects of the slow charging/discharging of the dielectric layer were minimal.
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33
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note
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It has been brought to our attention that increases in the subthreshold slope may be due to impurities from the SAM layers influencing the interface between the semiconductor and dielectric. Extensive purification and comparison were beyond the scope of this project but could lead to a broader control of device performance.
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Literature results have correlated reduced surface roughness with increased mobility in TFTs. See, for example, ref 15 herein.
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