Grain-boundary-limited charge transport in solution-processed 6,13 bis(tri-isopropylsilylethynyl) pentacene thin film transistors

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Chen, Jihua ^a   Tee, Chee Keong ^a   Shtein, Max ^a   Anthony, John ^a   Martin, David C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

(PL) PROPERTIES; ACTIVE LAYERS; ATOMIC FORCE (AF); CHARGE TRANSPORTING; CONCENTRATION (COMPOSITION); DOMAIN SIZES; ELECTRICAL CHARACTERISTICS; EVAPORATION RATE (ER); GRAIN-BOUNDARY (GB); HIGH SOLUBILITY; NEEDLE SHAPE; ON/OFF RATIOS; OPTICAL (PET) (OPET); PENTACENE (PEN); PENTACENE CRYSTALS; PENTACENE THIN FILM TRANSISTORS (TFT); POLYCRYSTALLINE THIN FILMS; SOLUTION CASTING; SUBSTRATE TEMPERATURE (ST); TRANSFER CHARACTERISTICS;

EID: 45149095096     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936978     Document Type: Article

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