Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend

Organic Electronics

Volumn 12, Issue 8, 2011, Pages 1319-1327

  Li, Xiaoran ^a,b   Smaal, Wiljan T T ^a   Kjellander, Charlotte ^a   Van Der Putten, Bas ^a   Gualandris, Kevin ^a   Smits, Edsger C P ^a   Anthony, John ^c   Broer, Dirk J ^b   Blom, Paul W M ^a   Genoe, Jan ^d   Gelinck, Gerwin ^a  

^a HOLST CENTRE   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF KENTUCKY   (United States)

^d IMEC   (Belgium)

Author keywords

Blend; Contact barrier; Organic transistor; Single droplet ink jet printing; Substituted pentacene

Indexed keywords

BLENDING; DROPS; FIELD EFFECT TRANSISTORS; FIGHTER AIRCRAFT; INK; INK JET PRINTERS;

CONTACT BARRIER; MATERIAL COMPOSITIONS; ORGANIC TRANSISTOR; PENTACENES; SCANNING KELVIN PROBE MICROSCOPY; SEMICONDUCTOR CHANNELS; SINGLE DROPLET; THIN INSULATING LAYERS;

INK JET PRINTING;

EID: 80955173628     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.04.020     Document Type: Article

References (44)

1. G. Yu, J. Gao, J.C. Hummelen, F. Wudl, and A.J. Heeger Science 270 1995 1789 1791
2. G. Li, V. Shrotriya, J. Huang, Y. Yao, T. Moriarty, K. Emery, and Y. Yang Nat. Mater. 4 2005 864 868
3. S. Goffri, C. Muller, N. Stingelin-Stutzmann, D.W. Breiby, C.P. Radano, J.W. Andreasen, R. Thompson, R.A.J. Janssen, M.M. Nielsen, P. Smith, and H. Sirringhaus Nat. Mater. 5 2006 950 956
4. B.A. Brown, J. Veres, R.M. Anemian, R.T. Williams, S.D. Ogier, S.W. Leeming, WO Patent 2005055248, 2005.
5. J. Smith, R. Hamilton, I. McCulloch, N. Stingelin-Stutzmann, M. Heeney, D. Bradley, and T. Anthopoulos J. Mater. Chem. 20 2010 2562 2574
6. B.K.C. Kjellander, W. Smaal, J.E. Anthony, and G.H. Gelinck Adv. Mater. 22 2010 4612 4616
7. R. Hamilton, J. Smith, S. Ogier, M. Heeney, J.E. Anthony, I. McCulloch, J. Veres, D.D.C. Bradley, and T.D. Anthopoulos Adv. Mater. 21 2009 1166 1171
8. J. Kang, N. Shin, D.Y. Jang, V.M. Prabhu, and D.Y. Yoon J. Am. Chem. Soc. 130 2008 12273 12275
9. T. Ohe, M. Kuribayashi, R. Yasuda, A. Tsuboi, K. Nomoto, K. Satori, M. Itabashi, and J. Kasahara Appl. Phys. Lett. 93 2008 053303-3
10. M. Madec, D. Crouch, G. Llorente, T. Whittle, M. Geoghegan, and S. Yeates J. Mater. Chem. 18 2008 3230 3236
11. J. Kwon, S. Shin, K. Kim, M.J. Cho, K.N. Kim, D.H. Choi, and B. Ju Appl. Phys. Lett. 94 2009 013506-3
12. J. Smith, R. Hamilton, Y. Qi, A. Kahn, D.D.C. Bradley, M. Heeney, I. McCulloch, and T.D. Anthopoulos Adv. Funct. Mater. 20 2010 2330 2337
13. S.D. Ogier, J. Veres, M. Zeidan, WO Patent 2007082584, 2007.
14. J. Smith, M. Heeney, I. McCulloch, J.N. Malik, N. Stingelin, D.D. Bradley, and T.D. Anthopoulos Org. Electron. 12 2011 143 147
15. B. DeGans, P. Duineveld, and U. Schubert Adv. Mater. 16 2004 203 213
16. M. Madec, P. Smith, A. Malandraki, N. Wang, J. Korvink, and S. Yeates J. Mater. Chem. 20 2010 9155 9160
17. J.A. Lim, W.H. Lee, H.S. Lee, J.H. Lee, Y.D. Park, and K. Cho Adv. Funct. Mater. 18 2008 229 234
18. J.A. Lim, J. Kim, L. Qiu, W.H. Lee, H.S. Lee, D. Kwak, and K. Cho Adv. Funct. Mater. 20 2010 3292 3297
19. J.E. Anthony, J.S. Brooks, D.L. Eaton, and S.R. Parkin J. Am. Chem. Soc. 123 2001 9482 9483
20. M.M. Payne, S.R. Parkin, J.E. Anthony, C.C. Kuo, and T.N. Jackson J. Am. Chem. Soc. 127 2005 4986 4987
21. D. Braga, and G. Horowitz Adv. Mater. 21 2009 1473 1486
22. Y. Luo, F. Gustavo, J. Henry, F. Mathevet, F. Lefloch, M. Sanquer, P. Rannou, and B. Grévin Adv. Mater. 19 2007 2267 2273
23. D. Charrier, M. Kemerink, B. Smalbrugge, T. de Vries, and R. Janssen ACS Nano 2 2008 622 626
24. G. Koley, M.G. Spencer, and H.R. Bhangale Appl. Phys. Lett. 79 2001 545
25. L.C. Teague, B.H. Hamadani, O.D. Jurchescu, S. Subramanian, J.E. Anthony, T.N. Jackson, C.A. Richter, D.J. Gundlach, and J.G. Kushmerick Adv. Mater. 20 2008 4513 4516
26. L.C. Teague, O.D. Jurchescu, C.A. Richter, S. Subramanian, J.E. Anthony, T.N. Jackson, D.J. Gundlach, and J.G. Kushmerick Appl. Phys. Lett. 96 2010 203305-3
27. A. Liscio, V. Palermo, K. Mullen, and P. Samori J. Phys. Chem. C 112 2008 17368 17377
28. J. Brondijk, X. Li, H. Akkerman, P. Blom, and B. de Boer Appl. Phys. A Mater. Sci. Process. 95 2009 1 5
29. S.H. Lee, M.H. Choi, S.H. Han, D.J. Choo, J. Jang, and S.K. Kwon Org. Electron. 9 2008 721 726
30. G. Horowitz, and P. Delannoy J. Appl. Phys. 70 1991 469
31. D. Yoon, Y. Chung, N. Shin, Y. Jo, J. Kang, V. Prabhu, D. Delongchamp, J. Kline, L. Richter, D. Gundlach, J. Anthony, MRS Fall Meeting, 2010, Boston, USA.
32. S.H. Kim, D. Choi, D.S. Chung, C. Yang, J. Jang, C.E. Park, and S.K. Park Appl. Phys. Lett. 93 2008 113306-3
33. K. Myny, S. De Vusser, S. Steudel, D. Janssen, R. Muller, S. De Jonge, S. Verlaak, J. Genoe, and P. Heremans Appl. Phys. Lett. 88 2006 222103-3
34. Z. Liu, J.H. Oh, M.E. Roberts, P. Wei, B.C. Paul, M. Okajima, Y. Nishi, and Z. Bao Appl. Phys. Lett. 94 2009 203301
35. W. Choi, B. Park, J. Lee, and T. Liu IEEE Electron Device Lett. 28 2007 743 745
36. K. Bhuwalka, J. Schulze, and T. Eisele Jpn. J. Appl. Phys. 43 2004 4073 4078
37. Q. Zhang, W. Zhao, and A. Seabaugh IEEE Electron Device Lett. 27 2006 297 300
38. Y. Khatami, and K. Banerjee IEEE Trans. Electron Devices 56 2009 2752 2761
39. K.P. Puntambekar, P.V. Pesavento, and C.D. Frisbie Appl. Phys. Lett. 83 2003 5539 5541
40. L. Bürgi, T. Richards, M. Chiesa, R.H. Friend, and H. Sirringhaus Synth. Met. 146 2004 297 309
41. M. Jaquith, J. Anthony, and J. Marohn J. Mater. Chem. 19 2009 6116 6123
42. K. Baeg, Y. Noh, J. Ghim, S. Kang, H. Lee, and D. Kim Adv. Mater. 18 2006 3179 3183
43. M. Debucquoy, M. Rockelé, J. Genoe, G. Gelinck, and P. Heremans Org. Electron. 10 2009 1252 1258
44. G = -10 V. Y is calculated to be a maximum of ∼1.6% for the blend device.