A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric

Solid-State Electronics

Volumn 53, Issue 3, 2009, Pages 266-270

  Kwon, Jae Hong ^a   Shin, Sang Il ^a   Choi, Jinnil ^a   Chung, Myung Ho ^a   Kang, Hochul ^b   Ju, Byeong Kwon ^a  

^a Korea University   (South Korea)

^b LG Display Co Ltd   (South Korea)

Author keywords

6,13 Bis(triisopropylsilylethynyl)pentacene; Methyl siloxane based spin on glass; Organic thin film transistor

Indexed keywords

FABRICATION; GATE DIELECTRICS; GATES (TRANSISTOR); GLASS; POTENTIAL ENERGY; POTENTIAL ENERGY SURFACES; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPIN DYNAMICS; SPIN GLASS; SUBSTRATES; THIN FILM DEVICES; TRANSISTORS;

6,13-BIS(TRIISOPROPYLSILYLETHYNYL)PENTACENE; DIFFERENT SUBSTRATES; ELECTRICAL MEASUREMENTS; FIELD-EFFECT MOBILITIES; I-V CHARACTERISTICS; METHYL-SILOXANE-BASED SPIN-ON GLASS; ORGANIC SEMICONDUCTORS; ORGANIC THIN-FILM TRANSISTOR; POLYETHERSULFONE; SOLUTION-PROCESSED; TIPS-PENTACENE;

THIN FILM TRANSISTORS;

EID: 61349191531     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.12.002     Document Type: Article

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