Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

Applied Physics Letters

Volumn 73, Issue 18, 1998, Pages 2681-2683

  Collet, J ^a   Vuillaume, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000055683     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122552     Document Type: Article

References (25)

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18. 2 thickness was measured independently by ellipsometry on a bare wafer submitted to the same cleaning (see Ref. 2).
19. -1. Upon introduction of disorder, the frequencies increase. See a review in A. Ulman, An introduction to Ultrathin Organic Films. From Langmuir-Blodgett to Self-assembly (Academic, Boston, 1991), pp. 6-17, 237-304 (see Ref. 4).
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22. ox=3.5nm) Schottky FET. This device had no gate to source/drain gap: J. R. Tucker and T. C. Shen, 3rd International Workshop on Quantum Functional Devices, Gaithersberg, 1997 (unpublished). Our devices were made as part of a program to test the feasibility of the use of SAMs in operating three-terminal devices, and the device geometry was not optimized to suppress this gap. Better intrinsic transconductance and current drain are expected for a no-gap hybrid nano-FET.
23. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
24. Dielectric constant and thickness of our vinyl and COOH-terminated SAMs have been measured by ellipsometry, X-ray reflectivity and capacitance technique: J. Collet, Ph.D. thesis, University of Lille, 1997.
25. Expected theoretical value is 0.2 eV, see Ref. 16, but this value is lowered by the force image potential.