Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator

Synthetic Metals

Volumn 92, Issue 1, 1998, Pages 47-52

  Dimitrakopoulos, Christos D ^a   Furman, Bruce K ^a,b   Graham, Teresita ^a   Hegde, Suryanarayan ^a,b   Purushothaman, Sampath ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Field effect transistors; Molecular beam deposition; , di hexyl hexathienylene

Indexed keywords

DEPOSITION; ELECTRIC INSULATORS; FABRICATION; MOLECULAR BEAMS; SEMICONDUCTING POLYMERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; THIN FILM TRANSISTORS;

DIHEXYLHEXATHIENYLENE; FIELD EFFECT MOBILITY; MOLECULAR BEAM DEPOSITION; POLYMERIC INSULATORS;

MOSFET DEVICES;

EID: 0031699626     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(98)80021-0     Document Type: Article

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