The effect of SiO2 dielectric layer on ultraviolet detecting properties of pentacene thin film transistor

Synthetic Metals

Volumn 161, Issue 1-2, 2011, Pages 132-135

  Yakuphanoglu, Fahrettin ^a,b   Farooq, W Aslam ^b  

^a FIRAT UNIVERSITY   (Turkey)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Field effect mobility; Photoresponse; Thin film transistor

Indexed keywords

DETECTING DEVICES; DIELECTRIC LAYER; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; PENTACENE THIN FILM TRANSISTORS; PENTACENE TRANSISTORS; PHOTORESPONSES; ROOM TEMPERATURE; SI SUBSTRATES; UV EXCITATION; UV-LIGHT EXCITATION;

DRAIN CURRENT; SILICON COMPOUNDS; THIN FILM TRANSISTORS;

THIN FILMS;

EID: 78650921516     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2010.11.008     Document Type: Article

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