Structural Characterization of a Pentacene Monolayer on an Amorphous SiO2 Substrate with Grazing Incidence X-ray Diffraction

Journal of the American Chemical Society

Volumn 126, Issue 13, 2004, Pages 4084-4085

  Fritz, Sandra E ^a   Martin, Stephen M ^a   Frisbie, C Daniel ^a   Ward, Michael D ^a   Toney, Michael F ^b  

^a University of Minnesota   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENZENE DERIVATIVE; PENTACENE DERIVATIVE; SILICON DIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; CALCULATION; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRODE; ENERGY; FILM; SEMICONDUCTOR; X RAY DIFFRACTION;

EID: 1842607461     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja049726b     Document Type: Article

References (26)

1. Lin, Y.-Y.; Gundlach, D. J.; Nelson, S. F.; Jackson, T. N. IEEE Electron Device Lett. 1997, 18, 606.
2. Dimitrakopoulos, C. D.; Malenfant, P. R. L. Adv. Mater. 2002, 14, 99.
3. Karl, N. Synth. Met. 2003, 133-134, 649.
4. Horowitz, G. Adv. Mater. 1998, 10, 365.
5. Baude, P. F.; Ender, D. A.; Haase, M. A.; Kelley, T. W.; Muyres, D. V.; Theisse, S. D. Appl. Phys. Lett. 2003, 82, 3964.
6. Dodabalapur, A.; Torsi, L.; Katz, H. E. Science 1995, 268, 270.
7. Granstrom, E. L.; Frisbie, C. D. J. Phys. Chem. 1999, 103, 8842.
8. Cornil, J.; Calbert, J. Ph.; Bredas, J. L. J. Am. Chem. Soc. 2001, 123, 1250.
9. Cheng, Y. C.; Silbey, R. J.; da Silva Filho, D. A.; Calbert, J. P.; Cornil, J.; Bredas, J. L. J. Chem. Phys. 2003, 118, 3764.
10. Holmes, D.; Kumaraswamy, S.; Matzger, A. J.; Vollhardt, K. P. C. Chem. Eur. J. 1999, 5, 3399.
11. Mattheus, C. C.; Dros, A. B.; Baas, J.; Meetsma, A.; de Boer, J. L.; Palstra, T. T. M. Acta Crystallogr. 2001, C57, 939.
12. Mattheus, C. C.; Dros, A. B.; Baas, J.; Oostergetel, G. T.; Meetsma, A.; de Boer, J. L.; Palstra, T. M. Synth. Met. 2003, 138, 475.
13. Minakata, T.; Imai, H.; Ozaki, M.; Saco, K. J. Appl. Phys. 1992, 72, 5220.
14. Bouchoms, I. P. M.; Schoonveld, W. A.; Vrijmoeth, J.; Klapwijk, T. M. Synth. Met. 1999, 104, 175.
15. Knipp, D.; Street, R. A.; Volkel, A.; Ho, J. J. Appl. Phys. 2003, 93, 347.
16. 001, precluding an unequivocal assignment.
17. Drummy, L. F.; Kubel, C.; Lee, D.; White, A.; Martin, D. C. Adv. Mater. 2002, 14, 54.
18. Wu, J. S.; Spence, J. C. H. J. Appl. Crystallogr. 2004, 37, 78.
19. 2 layer grown by thermal oxidation of a heavily doped 〈100〉 oriented silicon water. Pentacene was purified by gradient sublimation prior to vacuum sublimation of films.
20. Pentacene monolayers on a variety of substrates, some with different pentacene orientations, have been characterized by other methods: (a) Meyer zu Hereingdorf, F.-J.; Reuter, M. C.; Tromp, R. M. Nature 2001. 412, 517.
21. (b) Schroeder, P. G.; France, C. B.; Park, J. B.; Parkinson, B. A. J. Appl. Phys. 2002. 91, 3010.
22. (c) Ruiz, R.; Nickel, B.; Koch, N.; Feldman, L. C.; Haglund, R. F.; Kahn, A.; Scoles, G. Phys. Rev. B 2003. 67, 125406.
23. GIXD was performed at the National Synchrotron Light Source (NSLS), using beamline X20C at an incident angle of 0.25° and an X-ray energy of 7. 0 keV.
24. Snyder, R. L., Fiala, J.; Bunge, H. J. Defect and Microstructure Analysis by Diffraction; Oxford: New York, 1999.
25. 2 "Smart Minimizer", steepest descent. Newton-Raphson).
26. Kuzmenko, I.; Rapaport, H.; Kjaer, K.; Als-Nielsen, J.; Weissbuch, I.; Lahav, M.; Leiserowitz, L. Chem. Rev. 2001, 101, 1659.