Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator

Organic Electronics

Volumn 11, Issue 5, 2010, Pages 784-788

  Bae, Jin Hyuk ^a   Park, Jaehoon ^a   Keum, Chang Min ^a   Kim, Won Ho ^a   Kim, Min Hoi ^a   Kim, Seul Ong ^b   Kwon, Soon Ki ^b   Lee, Sin Doo ^a  

^a Seoul National University   (South Korea)

^b Gyeongsang National University   (South Korea)

Author keywords

Cracks; Solution processed; TIPS pentacene FET; Trapping sites

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CRACKS; POLYMERS;

ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; PENTACENE FIELD EFFECT TRANSISTORS; SOLUTION PROCESSED POLYMERS; SOLUTION-PROCESSED; THERMAL ANNEALING EFFECTS; TIPS-PENTACENE; TRAPPING SITES;

FIELD EFFECT TRANSISTORS;

EID: 77950595511     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.01.019     Document Type: Article

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