Gas-phase modeling of chlorine-based chemical vapor deposition of silicon carbide

Crystal Growth and Design

Volumn 12, Issue 4, 2012, Pages 1977-1984

  Leone, Stefano ^a   Kordina, Olof ^a   Henry, Anne ^a   Nishizawa, Shin Ichi ^a,b   Danielsson, Örjan ^a,c   Janzén, Erik ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Sandvik Heating Technology AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

C/SI RATIO; CHEMICAL PHENOMENAS; CHLORINE ATOM; GAS PHASE COMPOSITION; GAS-PHASE MODELING; GAS-PHASE NUCLEATION; GAS-PHASE REACTIONS; HOT-WALL REACTORS; KINETIC CALCULATIONS; LOW TEMPERATURES; MAIN PROCESS; REACTION CHAMBERS; SILICON CLUSTERS; SILICON PRECURSORS; SUSCEPTORS;

CHEMICAL VAPOR DEPOSITION; CHLORINE; EPITAXIAL GROWTH; PHASE COMPOSITION; PHASE INTERFACES; SILICON CARBIDE;

GASES;

EID: 84859415567     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg201684e     Document Type: Article

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