Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 107-110

  Leone, S ^a,b   Pedersen, H ^a   Henry, A ^a   Kordina, O ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Caracal Inc   (United States)

Author keywords

Chloride based CVD growth; Epilayers; High growth rate; On axis; Si face

Indexed keywords

CHLORINE COMPOUNDS; EPITAXIAL GROWTH; SUBSTRATES;

4H-SIC SUBSTRATE; CHLORIDE-BASED CVD GROWTH; HIGH GROWTH-RATE; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; ON-AXIS; PROCESS PARAMETERS; SI FACES;

SILICON CARBIDE;

EID: 63849267245     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.107     Document Type: Conference Paper

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