Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition

Journal of Crystal Growth

Volumn 312, Issue 1, 2009, Pages 24-32

  Leone, S ^a   Pedersen, H ^a   Henry, A ^a   Kordina, O ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Crystal morphology; A3. Chemical vapor deposition processes; B. Silicon carbide; B2. Semiconducting materials

Indexed keywords

4H-SIC SUBSTRATE; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; BASAL PLANE DISLOCATIONS; CHEMICAL VAPOR DEPOSITION PROCESS; CRYSTAL MORPHOLOGIES; DEPOSITION TEMPERATURES; DIFFERENT PROCESS; GASPHASE; HIGH CONCENTRATION; HIGH RATE; HOMOEPITAXIAL GROWTH; HOMOEPITAXIAL LAYERS; HOT-WALL REACTORS; HYDROGEN CHLORIDE; KEY PARAMETERS; OFF-AXIS; POLYTYPES; PRECURSOR MIXTURE; PRECURSOR RATIOS; PROCESS PARAMETERS; SEMICONDUCTING MATERIALS; THICK EPITAXIAL LAYERS;

CHEMICAL VAPOR DEPOSITION; CHLORINE; CHLORINE COMPOUNDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EPITAXIAL LAYERS; ETHYLENE; MORPHOLOGY; SEMICONDUCTOR GROWTH; SILANES; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70449711325     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.011     Document Type: Article

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