Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC

Thin Solid Films

Volumn 519, Issue 10, 2011, Pages 3074-3080

  Leone, S ^a   Beyer, F C ^a   Pedersen, H ^a   Andersson, S ^a   Kordina, O ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Chemical vapor deposition; Chlorinated precursor; Gas phase phenomena; Low temperature film growth; Silicon carbide

Indexed keywords

4H-SIC SUBSTRATE; C/SI RATIO; CHLORINATED PRECURSOR; CHLOROMETHANE; DEFECT-FREE; EXPERIMENTAL EVIDENCE; GAS PHASE PHENOMENA; GROWTH MECHANISMS; HOMOEPITAXIAL GROWTH; LOW GROWTH TEMPERATURE; LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE FILM GROWTH; LOW TEMPERATURES; METHYLTRICHLOROSILANE; MORPHOLOGY DEGRADATION; OFF-AXIS; OFF-CUTS; P-TYPE DOPANT; POLYTYPES; PRECURSOR SYSTEMS; REACTION CHAMBERS; TETRACHLOROSILANE;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; DEGRADATION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; ETHYLENE; GROWTH TEMPERATURE; MORPHOLOGY; OPTICAL ENGINEERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VAPORS;

FILM GROWTH;

EID: 79952313621     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.119     Document Type: Article

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