Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 51-53

  Makarov, Yu N ^a   Talalaev, R A ^a   Vorob'ev, A N ^a   Ramm, M S ^a   Bogdanov, M V ^a  

^a Semiconductor Technology Research Corp   (United States)

Author keywords

High Temperature CVD; Modeling; SiC

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; COMPUTATIONAL METHODS; PROPANE; SILICON WAFERS;

CHEMICAL VAPOUR DEPOSITION; COMPUTATIONAL ANALYSIS; GAS COMPOSITIONS; GROWTH CHAMBER; HIGH TEMPERATURE CVD; HIGHEST TEMPERATURE; MODELING; PRECURSOR DECOMPOSITION; SIC GROWTH; TECHNOLOGICAL PARAMETERS;

SILICON CARBIDE;

EID: 63849187443     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.51     Document Type: Conference Paper

References (3)

1. A.N. Vorob'ev et al., Comp. Mater. Sci. 24 (2002), p. 520
2. Information on http://www.semitech.us/products
3. S. Nigam et al., J. Cryst. Growth 284 (2005), p. 112