Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3364-3370

  Pedersen, H ^a   Beyer, F C ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Doping; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B1. Silicon carbide

Indexed keywords

6H-SILICON CARBIDES; A1. DOPING; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; A3. HOT WALL EPITAXY; ALUMINUM INCORPORATION; B1. SILICON CARBIDE; DOPANT ATOMS; DOPANT FLOW; DOPED LAYERS; DOPING CONCENTRATION; EFFECT OF TEMPERATURE; EPILAYERS GROWN; GROWTH PRESSURE; HIGH GROWTH RATE; LOW GROWTH RATE; MOLAR FRACTIONS; P-TYPE DOPING; SIC EPILAYERS;

ALUMINA; ALUMINUM; ATOMS; BORON; CHEMICAL VAPOR DEPOSITION; CHLORINE; CHLORINE COMPOUNDS; DOPING (ADDITIVES); EPILAYERS; EPITAXIAL GROWTH; GALLIUM; METAL RECOVERY; PRESSURE EFFECTS; QUANTUM CHEMISTRY; SILICON CARBIDE; THERMAL EFFECTS; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 66649109367     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.049     Document Type: Article

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