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Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 516-522

Growth and doping modeling of SiC-CVD in a horizontal hot-wall reactor

(2) Nishizawa, Shin Ichi a Pons, Michel b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b CNRS (France)

Author keywords

Doping; Etching; Growth; Modeling; Simulation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; PARAMETER ESTIMATION; SILICON CARBIDE;

EPITAXIAL LAYERS; HOT-WALL REACTORS; MASS FLUXES;

CHEMICAL REACTORS;

EID: 33845572903 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200606469 Document Type: Article

Times cited : (59)

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