Development of 4H-SiC epitaxial growth technique achieving high growth rate and large-area uniformity

Applied Physics Express

Volumn 1, Issue 1, 2008, Pages

  Ito, Masahiko ^a   Storasta, Liutauras ^a   Tsuchida, Hidekazu ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPILAYERS; GROWTH (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

DETECTION LIMITS; DOPING CONCENTRATIONS; FREE EXCITONS; HIGH GROWTH RATES; RMS ROUGHNESSES; SET-UPS; THICKNESS UNIFORMITIES; TRAP CONCENTRATIONS;

EPITAXIAL GROWTH;

EID: 57049170882     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.015001     Document Type: Article

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