High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Journal of Crystal Growth

Volumn 316, Issue 1, 2011, Pages 60-66

  Chowdhury, Iftekhar ^a   Chandrasekhar, M V S ^a   Klein, Paul B ^b   Caldwell, Joshua D ^b   Sudarshan, Tangali ^a  

^a The Department of Mechanical Engineering   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

A1. Doping; A1. Etching; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting materials

Indexed keywords

A1. DOPING; A1. ETCHING; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; HOT-WALL EPITAXY; SEMICONDUCTING MATERIALS;

CHEMICAL VAPOR DEPOSITION; DEFECTS; ECOLOGY; EPILAYERS; EPITAXIAL GROWTH; ETCHING; GROWTH RATE; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551686996     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.128     Document Type: Article

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