Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

Journal of Crystal Growth

Volumn 307, Issue 2, 2007, Pages 334-340

  Pedersen, H ^a   Leone, S ^a,b   Henry, A ^a   Beyer, F C ^a   Darakchieva, V ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Caracal Inc   (United States)

Author keywords

A3. Chemical vapour deposition processes; B. Methyltrichlorosilane; B. Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GAS MIXTURES; HYDROCARBONS; NUCLEATION; SILICON CARBIDE;

GAS PHASE; LINEAR DEPENDENCE; METHYLTRICHLOROSILANE; MOLAR FRACTION;

EPITAXIAL LAYERS;

EID: 34548418579     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.002     Document Type: Article

References (27)

1. Meyers R.L., Shishkin Y., Kordina O., and Saddow S.E. J. Crystal Growth 285 (2005) 486
2. Zhang J., Mazzola J., Hoff C., Koshka Y., and Casady J. Mater. Sci. Forum 483-485 (2005) 77
3. Danno K., Hori T., and Kimono T. J. Appl. Phys. 101 (2007) 053709
4. Aylward G., and Findlay T. SI Chemical Data. fourth ed. (1998), Wiley, Milton, Australia p. 115
5. Crippa D., Valente G.L., Ruggiero A., Neri L., Reitano R., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Abbagnale G., Veneroni A., Omarini F., Zamolo L., Masi M., Roccaforte F., Giannazzo F., Di Franco S., and La Via F. Mater. Sci. Forum 483-485 (2005) 67
6. Myers R., Kordina O., Shishkin Z., Rao S., Everly R., and Saddow S.E. Mater. Sci. Forum 483-485 (2005) 73
7. La Via F., Galvagno G., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Veneroni A., Masi M., Valente G.L., and Crippa D. Chem. Vap. Deposition 12 (2006) 509
8. Leone S., Mauceri M., Pistone G., Abbondanza G., Portuese F., Abagnale G., Valente G.L., Crippa D., Barbera M., Reitano R., Foti G., and La Via F. Mater. Sci. Forum 527-529 (2006) 179
9. MacMillian M.F., Loboda M.J., Chung G., Carlson E., and Wan J. Mater. Sci. Forum 527-529 (2006) 175
10. Dhanaraj G., Dudley M., Chen Y., Ragothamachar B., Wu B., and Zhang H. J. Crystal Growth 287 (2006) 344
11. Koshka Y., Lin H.-D., Melnychuk G., and Wood C. J. Crystal Growth 294 (2006) 260
12. Larkin D.J. Phys. Stat. Sol. B 202 (1997) 305
13. Kunstmann Th., and Veprek S. Appl. Phys. Lett. 67 21 (1995) 3126
14. Schulberg M.T., Allendorf M.D., and Outka D.A. Surf. Sci. 341 (1995) 262
15. Steckl A.J., Devrajan J., Tlali S., Jackson H.E., Tran C., Gorin S.N., and Ivanova L.M. Appl. Phys. Lett. 69 25 (1996) 3824
16. Gorin S.N., and Ivanova L.M. Phys. Stat. Sol. B 202 (1997) 221
17. Hofmann J., and Veprek S. Thin Solid Films 318 (1998) 18
18. Zelenin V.V., Solov'ev V.G., Starobinets S.M., Konnikov S.G., and Chelnokov V.E. Semiconductors 29 6 (1995) 581
19. Lu P., Edgar J.H., Glembocki O.J., Klein P.B., Glaser E.R., Perrin J., and Chaudhuri J. J. Crystal Growth 285 (2005) 506
20. Henry A., Hassan J., Bergman J.P., Hallin C., and Janzén E. Chem. Vap. Deposition 12 (2006) 475
21. Zhang J., Storasta L., Bergman P., Son N.T., and Janzén E. J. Appl. Phys. 93 (2003) 4708
22. Kimoto T., Nishino H., Yoo W.S., and Matsunami H. J. Appl. Phys. 73 2 (1993) 726
23. Forsberg U., Danielsson O., Henry A., Linnarsson M.K., and Janzén E. J. Crystal Growth 236 (2002) 101
24. Forsberg U., Danielsson O., Henry A., Linnarsson M.K., and Janzén E. J. Crystal Growth 253 (2003) 340
25. Dalibor T., Pensl G., Nordell N., and Schoner A. Phys. Rev. B 55 (1997) 13618
26. Achtziger N., and Witthuhn W. App. Phys. Lett. 71 (1997) 110
27. Veneroni A., Omarini F., and Masi M. Cryst. Res. Technol. 40 10-11 (2005) 967