Reactive flow in halide chemical vapor deposition of silicon carbide epitaxial films

Journal of Thermophysics and Heat Transfer

Volumn 22, Issue 4, 2008, Pages 555-562

  Wang, Rong ^a,b   Ma, Ronghui ^a,b  

^a UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^b Department of Mechanical Engineering ^*

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION RATES; EPITAXIAL FILMS; EPITAXIAL GROWTH; GAS DYNAMICS; HIGH TEMPERATURE OPERATIONS; INDUCTION HEATING; MASS TRANSFER; SILICON CARBIDE; SURFACE CHEMISTRY;

DEPOSITION TEMPERATURES; HALIDE CHEMICAL VAPOR DEPOSITION; HEAT AND MASS TRANSFER; HETEROGENEOUS CHEMICAL REACTION; HIGH DEPOSITION RATES; HIGH-TEMPERATURE ENVIRONMENT; OPERATIONAL PARAMETERS; SILICON CARBIDE EPITAXIAL FILMS;

FLOW OF FLUIDS;

EID: 56249135973     PISSN: 08878722     EISSN: 15336808     Source Type: Journal    
DOI: 10.2514/1.37729     Document Type: Article

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