Horizontal hot wall reactor design for epi-SiC growth

Crystal Research and Technology

Volumn 40, Issue 10-11, 2005, Pages 972-975

  Veneroni, A ^a   Omarini, F ^a   Masi, M ^a   Leone, S ^b   Mauceri, M ^b   Pistone, G ^b   Abbondanza, G ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Epitaxial Technology Center   (Italy)

Author keywords

Chemical vapour deposition; Hot wall reactor; SiC growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; SILANES; SILICON CARBIDE;

HOT WALL REACTORS; SIC GROWTH; TEMPERATURE PROFILES;

CHEMICAL REACTORS;

EID: 27744540444     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410470     Document Type: Conference Paper

References (7)

1. D. Crippa, G. L. Valente, A. Ruggiero, L. Neri, R. Reitano, L. Calcagno, G. Foti, M. Mauceri, S. Leone,G. Pistone, G. Abbondanza, G. Abbagnale, A. Veneroni, F. Omarini, L. Zamolo, M. Masi, F. Roccaforte, F. Giannazzo, S. Di Franco, and F. La Via, Mater. Sci. Forum (2004), in press.
2. A. Veneroni, F. Omarini, D. Moscatelli, M. Masi, S. Leone, M. Mauceri, G. Pistone, and G. Abbondanza, in press J. Cryst. Growth (2004), in press.
3. A. Veneroni, F. Omarini, M. Masi, S. Leone, M. Mauceri, G. Pistone, and G. Abbondanza, Mater. Sci. Forum (2004), in press.
4. M. D. Allendorf and R. J. Kee, J. Electrochem. Soc. 138, 84 (1991).
5. Ö. Danielsson, A. Henry, and E. Janzén, J. Cryst. Growth 243, 170 (2002).
6. M. Masi and S. Kommu, "Epitaxial growth modeling", in Epitaxial Silicon, D. Crippa, M. Masi, D. L. Rode Eds. (Academic Press, UK, 2001), p. 185.
7. S. Carrà and M. Masi, Prog. Cryst. Growth Charact. 37, 1 (1998).