SCOPUS 정보 검색 플랫폼

Volumn 303, Issue 1 SPEC. ISS., 2007, Pages 349-351

p-doping mechanism in HTCVD silicon carbide

Author keywords

A1. Doping; A2. Growth from vapor; B2. Semiconducting materials

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); PYROLYSIS; QUANTUM CHEMISTRY; SEMICONDUCTOR MATERIALS;

GROWTH FROM VAPOR; HYDROGEN RADICAL; TRIMETHYLALUMINIUM (TMA);

SILICON CARBIDE;

EID: 34047256802 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.12.066 Document Type: Article

Times cited : (5)

References (6)

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2
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3
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- Forsberg, U.¹ Danielsson, O.² Henry, A.³ Linnarsson, M.K.⁴ Janzén, E.⁵

4
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- Yablokov, V.A.¹ Yablokova, N.V.²

5
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- Ingle N.K., Theodoropoulos C., Mountziaris T.J., Wexler R.M., and Smith F.T.J. J. Crystal Growth 167 (1996) 543
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- Ingle, N.K.¹ Theodoropoulos, C.² Mountziaris, T.J.³ Wexler, R.M.⁴ Smith, F.T.J.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.