High growth rate of 4H-SiC epilayers on on-axis substrates with different chlorinated precursors

Crystal Growth and Design

Volumn 10, Issue 12, 2010, Pages 5334-5340

  Leone, Stefano ^a   Beyer, Franziska C ^a   Pedersen, Henrik ^a   Kordina, Olof ^a   Henry, Anne ^a   Janzén, Erik ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PROCESS; DIFFERENT PRECURSORS; GASPHASE; HIGH GROWTH RATE; HIGH QUALITY; HIGH-PURITY; HIGHER EFFICIENCY; HOMOEPITAXIAL GROWTH; HYDROGEN CHLORIDE; IN-SITU; LOW GROWTH RATE; METHYLTRICHLOROSILANE; OFF-AXIS; POWER DEVICES; PRECURSOR CHEMISTRY; PROCESS PARAMETERS; SIC EPILAYERS; SURFACE PRETREATMENT;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; EPILAYERS; EPITAXIAL GROWTH; ETHYLENE; GROWTH RATE; QUANTUM CHEMISTRY; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649921115     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg101288u     Document Type: Article

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