Growth kinetics and polytype stability in halide chemical vapor deposition of SiC

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 27-30

  Nigam, S ^a   Chung, H J ^a   Huh, S W ^a   Grim, J ^a   Polyakov, A Y ^a   Fanton, M A ^b   Weiland, B ^b   Snyder, D W ^b   Skowronski, M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Chemical vapor deposition; Growth models; Polytype stability; Single crystal growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GROWTH TEMPERATURE; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION;

GROWTH MODELS; POLYTYPE STABILITY; SILICON TETRACHLORIDE; SINGLE CRYSTAL GROWTH;

SILICON CARBIDE;

EID: 37849024052     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.27     Document Type: Conference Paper

References (5)

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