Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 436-451

  Meziere, J ^a   Ucar, M ^c   Blanquet, E ^a   Pons, M ^a   Ferret, P ^b   Di Cioccio, L ^b  

^a CNRS   (France)

^b CEA LETI   (France)

^c SAVOIE TECHNOLAC   (France)

Author keywords

A1. Chemically reactive flows; A1. Doping; A1. Etching; A1. Heat transfer; A1. Modeling; A1. Patterning; A1. Simulation; A1. Surface cleaning; A1. Thermal and thermodynamic processes; A2. Growth from vapor; A3. Chemical vapor deposition processes

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; ETCHING; HEAT TRANSFER; OPTIMIZATION; SURFACE CLEANING;

CHEMICAL VAPOR DEPOSITION PROCESSES; CHEMICALLY REACTIVE FLOWS; DOPING; GROWTH FROM VAPOR; PATTERNING; THERMAL AND THERMODYNAMIC PROCESSES;

SILICON CARBIDE;

EID: 2942648624     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.038     Document Type: Article

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