Reduction of chemical reaction mechanism for halide-assisted silicon carbide epitaxial film deposition

Industrial and Engineering Chemistry Research

Volumn 48, Issue 8, 2009, Pages 3860-3866

  Wang, Rong ^a   Ma, Ronghui ^a   Dudley, Michael ^b  

^a Baltimore County   (United States)

^b Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALS; CHEMICAL VAPOR DEPOSITION PROCESS; COMPUTING TIME; CONCENTRATION OF; DEPOSITION PRESSURES; DEPOSITION PROCESS; FILM DEPOSITION RATES; GAS FLOWS; GAS VELOCITIES; GAS-PHASE; GAS-PHASE COMPOSITIONS; INTEGRATED MODELS; MODEL VALIDATIONS; NUMERICAL STUDIES; REACTION MECHANISMS; REACTION STEPS; SILICON CARBIDE EPITAXIAL FILMS; SILICON CARBIDE FILMS; SILICON TETRACHLORIDES; THREE-DIMENSIONAL SIMULATIONS; TRANSPORT PROCESS;

CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL FILMS; GRAFTING (CHEMICAL); MOLECULAR BEAM EPITAXY; NEWTONIAN FLOW; NONMETALS; PROPANE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACE CHEMISTRY; SYNTHESIS (CHEMICAL); THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS; VAPORS;

FILM GROWTH;

EID: 65249117510     PISSN: 08885885     EISSN: None     Source Type: Journal    
DOI: 10.1021/ie8017093     Document Type: Article

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