Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 871-874

  Nishizawa, Shin ichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Computer simulation; A1. Heat transfer; A2. Growth from vapor; A2. Single crystal growth; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE; COMPUTER SIMULATION; CONTROL SYSTEM ANALYSIS; CONTROL THEORY; CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; GROWTH (MATERIALS); HEAT EXCHANGERS; HEAT TRANSFER; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON COMPOUNDS; SINGLE CRYSTALS; SUBLIMATION; THERMOANALYSIS; VAPORS;

A1. COMPUTER SIMULATION; A1. HEAT TRANSFER; A2. GROWTH FROM VAPOR; A2. SINGLE CRYSTAL GROWTH; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B2. SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTOR GROWTH;

EID: 59749105555     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.105     Document Type: Article

References (17)

1. Tairov Yu.M., and Tsvetkov V.F. J. Crystal Growth 43 (1978) 209
2. Schöner A. In: Choyke W.J., Matsunami H., and Pensil G. (Eds). Silicon Carbide (2003), Springer, Berlin, New York 229
3. Danielsson O., Henry A., and Janzén E. J. Crystal Growth 243 (2002) 170
4. Danielsson O., Forsberg U., and Janzén E. J. Crystal Growth 250 (2003) 471
5. Forsberg U., Danielsson O., Henry A., Linnarsson M.K., and Janzén E. J. Crystal Growth 253 (2003) 340
6. Nishizawa S., Kato T., and Arai K. J. Crystal Growth 303 (2007) 342
7. Nishizawa S., and Pons M. Chem. Vap. Deposition 12 (2006) 516
8. Nishizawa S., and Pons M. J. Crystal Growth 303 (2007) 334
9. Flux-Expert, SIMULOG, France.
10. CFD-ACE+, CFDRC, AL, USA.
11. Meziere J., Ucar M., Blanquet E., Pons M., Ferret P., and Di Cioccio L. J. Crystal Growth 267 (2004) 436
12. Veneroni A., Omarini F., and Masi M. Cryst. Res. Technol. 40 (2005) 967
13. Nishizawa S., Nakashima S., and Kato T. Mater. Res. Soc. Symp. Proc. 911 (2006) 29
14. Larkin D.J., Neudeck P.G., Powell J.A., and Matus L.G. Appl. Phys. Lett. 65 (1994) 1659
15. Pedersen H., Leone S., Henry A., Beyer F.C., Darakchieva V., and Janzén E. J. Crystal Growth 307 (2007) 334
16. La Via F., Galvagno G., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Veneroni A., Masi M., Valente G.L., and Crippa D. Chem. Vap. Deposition 12 (2006) 509
17. Veneroni A., and Masi M. Chem. Vap. Deposition 12 (2006) 562