Growth kinetics study in halide chemical vapor deposition of SiC

Journal of Crystal Growth

Volumn 284, Issue 1-2, 2005, Pages 112-122

  Nigam, S ^a   Chung, H J ^a   Polyakov, A Y ^a   Fanton, M A ^b   Weiland, B E ^b   Snyder, D W ^b   Skowronski, M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

A1. Growth models; A2. Chemical vapor deposition processes; A2. Growth from vapor; A2. Single crystal growth; B1. Silicon carbide; B2. Wide bandgap semiconductors

Indexed keywords

GROWTH KINETICS; HALIDE MINERALS; MATHEMATICAL MODELS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SILICON COMPOUNDS; SINGLE CRYSTALS;

GROWTH FROM VAPOR; GROWTH MODELS; SINGLE CRYSTAL GROWTH; WIDE BANDGAP SEMICONDUCTORS;

CHEMICAL VAPOR DEPOSITION;

EID: 25144474905     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.06.027     Document Type: Article

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