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Volumn 243, Issue 1, 2002, Pages 170-184

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

Author keywords

A1. Computer simulation; A1. Growth models; A3. Chemical vapor deposition; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ETCHING; FLUID DYNAMICS; SILICON CARBIDE;

EID: 0036070329     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01486-0     Document Type: Article
Times cited : (99)

References (60)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.