An integrated model for halide chemical vapor deposition of silicon carbide epitaxial films

Journal of Crystal Growth

Volumn 310, Issue 18, 2008, Pages 4248-4255

  Wang, Rong ^a   Ma, Ronghui ^a  

^a Baltimore County   (United States)

Author keywords

A1. Numerical simulation; A1. Reaction kinetics; A3. Halide chemical vapor deposition; B1. Silicon carbide epitaxial films

Indexed keywords

CHEMICAL SENSORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DEPOSITION RATES; EPITAXIAL FILMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; ETCHING; GAS DYNAMICS; GASES; HYDROGEN; MASS TRANSFER; NONMETALS; OPTICAL ENGINEERING; PROPANE; SCALE (DEPOSITS); SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SURFACE CHEMISTRY; THERMAL SPRAYING; VAPORS;

A1. NUMERICAL SIMULATION; A1. REACTION KINETICS; A3. HALIDE CHEMICAL VAPOR DEPOSITION; AS-DEPOSITED FILMS; B1. SILICON CARBIDE EPITAXIAL FILMS; CHEMICAL VAPOR DEPOSITION PROCESSES; CHEMICAL VAPORS; COMPREHENSIVE MODELING; DEPOSITION PROCESSING; DEPOSITION TEMPERATURE; ETCHING EFFECT; EXPERIMENTAL STUDIES; FILM DEPOSITION; GAS COMPOSITIONS; GAS DELIVERY; GAS-PHASE; HEAT AND MASS TRANSFER; HIGH-DEPOSITION RATES; HOT-WALL REACTORS; HYDROGEN CHLORIDE; INDUCTION HEATING; INTEGRATED MODELLING; NUMERICAL SIMULATIONS; OPERATIONAL PARAMETERS; PRECURSOR FLOW; PROCESSING CONDITIONS; RADIO FREQUENCIES; REACTOR CONFIGURATION; SILICON CARBIDE FILMS; SILICON TETRACHLORIDES;

MOLECULAR BEAM EPITAXY;

EID: 49749117925     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.060     Document Type: Article

References (24)

1. Dhanaraj G., Huang X.R., Dudley M., Prasad V., and Ma R.H. Crystal Growth Technology (2003), William Andrew co-published with Springer, New York, NY
2. Mehregany M., Zorman C.A., Rajan N., and Wu C.H. Proc. IEEE 86 (1998) 1594
3. Mehran M., and Christian A.Z. Proc. SPIE 1 (2004)
4. Wagner G., Schulz D., and Siche D. Prog. Cryst. Growth Charact. Mater. 47 (2003) 139
5. Dollet A., de Persis S., Pons M., and Matecki M. Surf. Coat. Technol. 177 (2004) 382
6. Vorob'ev A.N., Karpov S.Y., Bogdanov M.V., Komissarov A.E., Bord O.V., Zhmakin A.I., and Makarov Y.N. Comput. Mater. Sci. 24 (2002) 520
7. Rupp R., Wiedenhofer A., Friedrichs P., Peters D., Schorner R., and Stephani D. Mater. Sci. Forum 264 (1998) 89
8. Allendorf M.D., and Kee R.J. J. Electrochem. Soc. 138 (1991) 841
9. Danielsson O., Henry A., and Janzen E. J. Crystal Growth 243 (2002) 170
10. La Via F., Galvagno G., Foti G., Mauceri M., and Veneroni A. Chem. Vapor Depos. 12 (2005) 509
11. Nigam S., Chung H.J., Polyakov A.Y., Fanton M.A., Weiland B.E., Snyder D.W., and Skowronski M. J. Crystal Growth 284 (2005) 112
12. Chung H.J., Polyakov A.Y., Huh S.W., Nigam S., Skowronski M., Fanton M.A., Weiland B.E., and Snyder D.W. J. Appl. Phys. 97 (2005) 084913
13. Fanton M., Snyder D., Weiland B., Cavalero R., Polyakov A., Skowronski M., and Chung H. J. Crystal Growth 287 (2006) 359
14. Dhanaraj G., Dudley M., Chen Y., Ragothamachar B., Wu B., and Zhang H. J. Crystal Growth 28 (2006) 344
15. Chen Y., Dhanaraj G., Chen H., Vetter W., and Dudley M. Mater. Res. Soc. Symp. Proc. 891 (2006) EE12-11.1
16. Dhanaraj G., Chen Y., Chen H., Cai D., Zhang H., and Dudley M. J. Electron. Mater. 36 (2007) 332
17. Veneroni A., and Masi M. Chem. Vapor Depos. 12 (2006) 562
18. Wang R., and Ma R.H. J. Crystal Growth 308 (2007) 189
19. Asai R. IEEE Proc. (1998) 0-7803-4437-5
20. Hallin C., Bakin A.S., Owman F., Martensson P., Kordina O., and Janzen E. Inst. Phys. Conf. Ser. 142 (1995) 613
21. Burk Jr. A., and Rowland L.B. Appl. Phys. Lett. 68 (1996) 382
22. Bird R.B., Stewart W.E., and Lightfoot E.N. Transport Phenomena (1960), Wiley, New York, NY
23. CHEMKIN, Input Manual, V 4.1 〈www.reactiondesign.com〉.
24. Grujicic M., and Cao G. J. Mater. Sci. 38 (2003) 1819