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Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 99-102

4H-SiC homoepitaxial growth on vicinal-off angled Si-face substrate

(4) Kojima, Kazutoshi a Ito, Sachiko a Senzaki, Junji a Okumura, Hajime a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

4H SiC; Basal plane dislocation; Morphology; Si face; Step bunching; Vicinal off angle

Indexed keywords

EPILAYERS; EPITAXIAL GROWTH; ETCHING; MORPHOLOGY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SURFACE MORPHOLOGY;

4H-SIC; BASAL PLANE DISLOCATIONS; OFF-ANGLE; SI FACES; STEP BUNCHING;

SUBSTRATES;

EID: 77955446329 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.99 Document Type: Conference Paper

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.