Homoepitaxial silicon carbide deposition processes via chlorine routes

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 8825-8829

  Fiorucci, A ^a   Moscatelli, D ^a   Masi, M ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

A Growth models; C Chemical vapour deposition; D Silicon carbide; X Epitaxial deposition

Indexed keywords

CHLORINATION; FILMS; GROWTH RATE; QUANTUM THEORY; RATE CONSTANTS; SILICON CARBIDE;

CHEMICAL MECHANISM; CHLORINATED PRECURSOR; EPITAXIAL DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION; CHLORINATION; FILMS; GROWTH RATE; QUANTUM THEORY; RATE CONSTANTS; SILICON CARBIDE;

EID: 34547673610     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.110     Document Type: Article

References (19)

1. Kordina O., et al. Phys. Status Solidi, B Basic Res. 202 1 (1997) 321
2. Crippa D., et al. Silicon Carbide and Related Materials 2004 (2005) 67
3. Leone S., et al. Mater. Sci. Forum 527529 (2006) 179
4. Koshka Y., et al. J. Cryst. Growth 294 2 (2006) 260
5. Veneroni A., and Masi M. Chem. Vap. Deposition 12 8-9 (2006) 562
6. Veneroni A., Omarini F., and Masi M. Cryst. Res. Technol. 40 10-11 (2005) 967
7. Masi M., and Veneroni A. ECS Transac. 2 7 (2007) 11
8. Benson S.W. Thermochemical Kinetics (1976), Wiley Interscience, New York
9. Chaussende D., et al. Chem. Vap. Deposition 12 8-9 (2006) 541
10. Nigam S., et al. J. Cryst. Growth 284 1-2 (2005) 112
11. SANDIA Thermochemistry database, www.sandia.gov.
12. www.cantera.org.
13. Avrov D.D., et al. J. Cryst. Growth 199 (1999) 1011
14. Valente G., et al. J. Cryst. Growth 230 1-2 (2001) 247
15. Carra S., and Masi M. Prog. Cryst. Growth Charact. Mater. 37 1 (1998) 1
16. Masi M., and Kommu S. Silicon Epitaxy (2001) 185
17. La Via F., et al. Chem. Vap. Deposition 12 8-9 (2006) 509
18. Walch S.P., and Dateo C.E. J. Phys. Chem., A 105 10 (2001) 2015
19. Raghavachari K., and Anderson J.B. J. Phys. Chem. 100 31 (1996) 12960