InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

Applied Physics Letters

Volumn 98, Issue 8, 2011, Pages

  Xue, Fei ^a   Zhao, Han ^a   Chen, Yen Ting ^a   Wang, Yanzhen ^a   Zhou, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BURIED CHANNELS; CHANNEL MOBILITY; DRIVE CURRENTS; EFFECTIVE MOBILITIES; FIELD-EFFECT; HIGH FIELD; INAS; METAL OXIDE SEMICONDUCTOR; MOSFETS; PERFORMANCE IMPROVEMENTS; SATURATION PROPERTIES; SUBTHRESHOLD SWING;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM ARSENIDE; MOSFET DEVICES;

SEMICONDUCTING INDIUM;

EID: 79952085267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3559609     Document Type: Article

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