In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain

Electrochemical and Solid-State Letters

Volumn 14, Issue 2, 2011, Pages

  Zhang, Xingui ^a   Guo, Huaxin ^a   Gong, Xiao ^a   Zhou, Qian ^a   Lin, You Ru ^b   Lin, Hau Yu ^b   Ko, Chih Hsin ^b   Wann, Clement H ^a   Yeo, Yee Chia ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT METALLIZATION; GATE LENGTH; INTEGRATION SCHEME; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NMOSFET; NMOSFETS; PEAK TRANSCONDUCTANCE; SCHOTTKY CONTACTS; SELECTIVE REMOVAL; SELF-ALIGNED; SOURCE AND DRAINS; TRANSFER CHARACTERISTICS; WET-ETCH;

DRAIN CURRENT; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; MOS DEVICES; SEMICONDUCTING INDIUM; WET ETCHING;

MOSFET DEVICES;

EID: 78951491326     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3516213     Document Type: Article

References (24)

1. Y. Xuan, Y. Q. Wu, T. Shen, T. Yang, and P. D. Ye, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2007, 637.
2. N. Li, E. S. Harmon, J. Hyland, D. B. Salzman, T. P. Ma, Y. Xuan, and P. D. Ye, Appl. Phys. Lett. APPLAB 0003-6951, 92, 143507 (2008). 10.1063/1.2908926
3. T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. APPLAB 0003-6951, 93, 033516 (2008). 10.1063/1.2956393
4. T. Ashley, M. T. Emeny, D. G. Hayes, K. P. Hilton, R. Jefferies, J. O. Maclean, S. J. Smith, A. W.-H. Tang, D. J. Wallis, and P. J. Webber, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2009, 35.1.1.
5. D.-H. Kim and J. A. del Alamo, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2007, 629.
6. Y. Sun, E. W. Kiewra, J. P. de Souza, J. J. Bucchignano, K. E. Fogel, D. K. Sadana, and G. G. Shahidi, IEEE Electron Device Lett. EDLEDZ 0741-3106, 30, 5 (2009). 10.1109/LED.2008.2008827
7. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X, 4, 153 (2005). 10.1109/TNANO.2004.842073
8. R. J. W. Hill, D. A. J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, A. Asenov, P. Zurcher, K. Rajagopalan, J. Abrokwah, IEEE Electron Device Lett. EDLEDZ 0741-3106, 28, 1080 (2007). 10.1109/LED.2007.910009
9. M. Passlack, P. Zurcher, K. Tajaqopalan, R. Droopad, J. Abrokwah, M. Tuut, Y.-B. Park, E. Johnson, O. Hartin, A. Zlotnicka, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2007, 621.
10. H.-C. Chin, X. Liu, X. Gong, and Y.-C. Yeo, IEEE Trans. Electron Devices IETDAI 0018-9383, 57, 973 (2010). 10.1109/TED.2010.2044285
11. H.-C. Chin, M. Zhu, Z.-C. Lee, X. Liu, K.-M. Tan, H. K. Lee, L. Shi, L.-J. Tang, C.-H. Tung, G.-Q. Lo, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2008, 383.
12. A. Dimoulas, A. Toriumi, and S. E. Mohney, MRS Bull. MRSBEA 0883-7694, 34, 522 (2009).
13. H.-C. Chin, M. Zhu, C.-H. Tung, G. S. Samudra, and Y.-C. Yeo, IEEE Electron Device Lett. EDLEDZ 0741-3106, 29, 553 (2008). 10.1109/LED.2008.921393
14. M. Murakami, Sci. Technol. Adv. Mater. STAMCV 1468-6996, 3, 1 (2002). 10.1016/S1468-6996(01)00150-4
15. H. Guo, X. Zhang, H.-C. Chin, X. Gong, S.-M. Koh, C. Zhan, G.-L. Luo, C.-Y. Chang, H.-Y. Lin, C.-H. Chien, in Proceedings of the VLSI Technology, Systems and Application (VLSI-TSA), IEEE, p. 152 (2010).
16. X. Zhang, H. Guo, C.-H. Ko, C. H. Wann, C.-C. Cheng, H.-Y. Lin, H.-C. Chin, X. Gong, P. S. Y. Lim, G.-L. Luo, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562, 2010, 233.
17. H.-C. Chin, X. Gong, X. Liu, and Y.-C. Yeo, IEEE Electron Device Lett. EDLEDZ 0741-3106, 30, 805 (2009). 10.1109/LED.2009.2024649
18. U. Singisetti, M. A. Wistey, G. J. Burek, E. Arkun, A. K. Baraskar, Y. Sun, E. W. Kiewra, B. J. Thibeault, A. C. Gossard, C. J. Palmstrøm, Phys. Status Solidi C ZZZZZZ 1610-1634, 6, 1394 (2009). 10.1002/pssc.200881532
19. U. Singisetti, M. A. Wistey, G. J. Burek, A. K. Baraskar, B. J. Thibeault, A. C. Gossard, M. J. W. Rodwell, B. Shin, E. J. Kim, P. C. McIntyre, IEEE Electron Device Lett. EDLEDZ 0741-3106, 30, 1128 (2009). 10.1109/LED.2009.2031304
20. X. Li, R. J. W. Hill, P. Longo, M. C. Holland, H. Zhou, S. Tohms, D. S. Macintyre, and I. G. Thayne, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 27, 3153 (2009). 10.1116/1.3256624
21. M. Yokoyama, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562, 2009, 242.
22. S. H. Kim, S. Nakagawa, T. Haimoto, R. Nakane, M. Takenaka, and S. Takagi, in Proceedings of the Device Research Conference, IEEE, p. 115 (2009).
23. Y.-L. Chueh, A. C. Ford, J. C. Ho, Z. A. Jacobson, Z. Fan, C.-Y. Chen, L.-J. Chou, and A. Javey, Nano Lett. NALEFD 1530-6984, 8, 4528 (2008). 10.1021/nl802681x
24. C. J. Hill, R. A. Beach, and T. C. McGill, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 18, 2044 (2000). 10.1116/1.1306283