Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement

Electrochemical and Solid-State Letters

Volumn 14, Issue 3, 2011, Pages

  Gong, Xiao ^a   Ivana, ^a   Chin, Hock Chun ^a   Zhu, Zhu ^a   Lin, You Ru ^b   Ko, Chih Hsin ^b   Wann, Clement H ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; DEVICE PERFORMANCE; GATE LENGTH; INP; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; NMOSFETS; PERFORMANCE ENHANCEMENTS; SATURATION DRAIN CURRENT; SELF-ALIGNED GATE; SUBTHRESHOLD SWING;

DRAIN CURRENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 78951482228     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3526139     Document Type: Article

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