Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 685-687

  Datta, Suman ^a   Dewey, G ^a   Fastenau, J M ^b   Hudait, M K ^a   Loubychev, D ^b   Liu, W K ^b   Radosavljevic, M ^a   Rachmady, W ^a   Chau, R ^a  

^a INTEL CORPORATION   (United States)

^b IQE INC   (United States)

Author keywords

Heterogeneous integration; III V materials; InGaAs InAlAs; Low power; Quantum well (QW) devices; Silicon

Indexed keywords

BUFFER LAYERS; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES; TRANSCONDUCTANCE;

HETEROGENEOUS INTEGRATION; QUANTUM-WELL TRANSISTOR;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547789291     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.902078     Document Type: Article

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