A new self-aligned contact technology for III-V MOSFETs

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Volumn , Issue , 2010, Pages 152-153

  Guo, Huaxin ^a   Zhang, Xingui ^a   Chin, Hock Chun ^a   Gong, Xiao ^a   Koh, Shao Ming ^a   Zhan, Chunlei ^a   Luo, Guang Li ^b   Chang, Chun Yen ^c   Lin, Hau Yu ^d   Chien, Chao Hsin ^b,c   Han, Zong You ^c   Huang, Shih Chiang ^b   Cheng, Chao Ching ^d   Ko, Chih Hsin ^d   Wann, Clement H ^d   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT TECHNOLOGIES; GAAS; IN-SITU; MOSFETS; NICKEL GERMANOSILICIDE; SELF-ALIGNED; SOURCE AND DRAINS;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; MOSFET DEVICES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SURFACE TREATMENT; TECHNOLOGY;

GALLIUM ARSENIDE;

EID: 77957892721     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2010.5488907     Document Type: Conference Paper

References (7)

1. R. Chau et al., IEEE T. Nanotechnology 4, pp. 153, 2005.
2. N. Goel et al., IEDM Tech. Dig., pp. 363, 2008.
3. T. H. Chiang et al., IEDM Tech. Dig., pp. 375, 2008.
4. H.-C. Chin et al., IEEE Elect. Dev. Lett. 30, pp. 805, 2009.
5. Y. Bai et al., J. Appl. Phys. 104, 084518, 2008.
6. R. R. Lieten et al., Appl. Phys. Lett. 92, 022106, 2008.
7. H.-C. Chin et al., IEDM Tech. Dig., pp. 383, 2008.