In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2011, Pages 26-27

  Zhang, Xingui ^a   Guo, Huaxin ^a   Gong, Xiao ^a   Zhou, Qian ^a   Lin, Hau Yu ^b   Lin, You Ru ^b   Ko, Chih Hsin ^b   Wann, Clement H ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT REACTIONS; METALLIZATION PROCESS; NMOSFETS; OFF-STATE CURRENT; SELECTIVE REMOVAL; SELF-ALIGNED;

GALLIUM; METALLIZING; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 79960028741     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2011.5872217     Document Type: Conference Paper

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