Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 82-89

  Hwang, E ^a   Mookerjea, S ^a   Hudait, M K ^b   Datta, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Ballistic effect; Double Gate (DG) QWFETs; Drift Diffusion simulation; Effective carrier injection velocity; InGaAs; Quantum well FETs (QWFETs)

Indexed keywords

DOUBLE-GATE; DRIFT-DIFFUSION SIMULATION; EFFECTIVE CARRIER INJECTION VELOCITY; INGAAS; QUANTUM WELL FETS (QWFETS);

DIFFUSION; FIELD EFFECT TRANSISTORS; INDIUM; MATHEMATICAL MODELS; SCALABILITY; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM;

EID: 79957937915     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.013     Document Type: Article

References (26)

1. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, and J. Kavalieros Benchmarking nanotechnology for high-performance and low-power logic transistor applications IEEE Trans Nanotechnol 4 2 2005 153 158 (Pubitemid 40421651)
2. S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, and M. Emeny 85 nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications IEDM Tech Dig 2005 763 766 (Pubitemid 46370962)
3. 0.3As quantum-well transistors on silicon substrate IEEE Electron Dev Lett 28 8 2007 685 687 (Pubitemid 47242024)
4. D.H. Kim, and J.A. Alamo 30 nm E-mode InAs PHEMTs for THz and Future Logic Applications Int Electron Dev Meet (IEDM) 2008 719 722
5. G. Dewey, M.K. Hudait, K. Lee, R. Pillarisetty, W. Rachmady, and M. Radosavljevic Carrier transport in high-mobility III-V quantum-well transistors and performance impact for high-speed low-power logic applications IEEE Electron Dev Lett 29 10 2008 1094 1097
6. Dewey G, Kotlyar R, Pillarisetty R, Radosavljevic M, Rakshit T, Then H, Chau R. Logic performance evaluation and transport physics of schottky-gate III-V compound semiconductor quantum well field effect transistors for power supply voltages (VCC) ranging from 0.5 V to 1.0 V. Int Electron Dev Meet (IDEM) 2009:1-4.
7. 0.3As HEMTs for beyond-CMOS applications IEEE Trans Electron Dev 54 10 2007 2606 2613 (Pubitemid 47541872)
8. 0.3As HEMTs for beyond-CMOS logic applications. IEDM Tech Dig 2005:767-770. (Pubitemid 46370963)
9. 0.3As HEMTs J Semicond Technol Sci 6 3 2006 146 153
10. TCAD Sentaurus. Synopsys, Inc., Z-2007.03 edition; 2007.
11. A. Ali, H. Madan, R. Misra, E. Hwang, A. Agrawal, and P. Schiffer Advanced composite high-k gate stack for mixed anion arsenide-antimonide quantum well transistors Int Electron Dev Meet (IEDM) 12 2010 23 25
12. C. Canali, G. Majni, R. Minder, and G. Ottaviani Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature IEEE Trans Electron Dev 22 11 1975 1045 1047
13. Bude JD. MOSFET modeling into the ballistic regime. In: Proceedings SISPAD 2000; 23-6.
14. R. Granzner, V.M. Polyakov, F. Schwierz, M. Kittler, R.J. Luyken, and W. Riosner Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results Microelectron Eng 83 2 2006 241 246 (Pubitemid 43199284)
15. A. Khakifirooz, and D.A. Antoniadis MOSFET performance scaling - part I: historical trends IEEE Trans Electron Dev 55 6 2008 1391 1400 (Pubitemid 351803240)
16. A. Khakifirooz, and D.A. Antoniadis MOSFET performance scaling-Part II: future directions IEEE Trans Electron Dev 55 6 2008 1401 1408 (Pubitemid 351803241)
17. R.H. Yan, A. Ourmazd, and K.F. Lee Scaling the Si MOSFET: from bulk to SOI to bulk IEEE Trans Electron Dev 39 7 1992 1704 1710
18. 0.3As HEMTs for Post-Si-CMOS logic applications IEEE Trans Electron Dev 55 10 2008 2546 2553
19. J. Wang, and M. Lundstrom Ballistic transport in high electron mobility transistors IEEE Trans Electron Dev 50 7 2003 1604 1609
20. M.S. Shur Low ballistic mobility in submicron HEMTs IEEE Electron Dev Lett 23 9 2002 511 513 (Pubitemid 35022939)
21. Huet K, Saint-Martin J, Bournel A, Galdin-Retailleau S, Dollfus P, Ghibaudo G, Mouis M. Monte Carlo study of apparent mobility reduction in nano-MOSFETs. In: Proceedings ESSDERC; 2007. p. 382-5.
22. M. Lundstrom Elementary scattering theory of the Si MOSFET IEEE Electron Dev Lett 18 7 1997 361 363 (Pubitemid 127557117)
23. M. Cooke Digital III - Vs review III - Vs Rev 19 2006 18 22
24. D.H. Kim, J.A. Alamo, D.A. Antoniadis, and B. Brar Extraction of virtual-source injection velocity in sub-100 nm III-V HFETs Int Electron Dev Meet (IEDM) 2009 861 864
25. Kim DH, Alamo JA. Scalability of sub-100 nm thin-channel InAs PHEMTs. In: International conference on indium phosphide and related materials; 2009. p. 132-5.
26. 0.3As quantum well field effect transistors on silicon substrate for low power logic applications. Int Electron Dev Meet (IEDM) 2009:319-22.