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Volumn 159, Issue 1, 2012, Pages

Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT FORMATION; CROSS-SECTIONAL TEM; ETCH CHEMISTRY; ETCH RATES; ETCH SELECTIVITY; NMOSFETS; SELECTIVE WET ETCHING; SELF-ALIGNED; SOURCE AND DRAINS; STEP HEIGHT MEASUREMENT;

EID: 84863116330     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.020201jes     Document Type: Article
Times cited : (14)

References (29)
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  • 4
    • 33846008046 scopus 로고    scopus 로고
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    • DOI 10.1109/LED.2006.887932
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    • Lian, C.1    Xing, H.2    Wang, C.S.3    McCarthy, L.4    Brown, D.5
  • 26
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    • U.S. Patent 3,119,757, Jan. 28
    • D. W. Schroeder, U.S. Patent 3,119,757, Jan. 28, (1964).
    • (1964)
    • Schroeder, D.W.1
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    • Burns, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.