Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents

Solid-State Electronics

Volumn 54, Issue 1, 2010, Pages 37-41

  Wu, Yun Chi ^a   Chang, Edward Yi ^a   Lin, Yueh Chin ^a   Kei, Chi Chung ^b,c   Hudait, Mantu K ^d   Radosavljevic, Marko ^d   Wong, Yuen Yee ^a   Chang, Chia Ta ^a   Huang, Jui Chien ^a   Tang, Shih Hsuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

^d INTEL CORPORATION   (United States)

Author keywords

Al2O3; ALD; Capacitor; InAs; InGaAs; MOS

Indexed keywords

ALD; DRIFT VELOCITIES; EFFECTIVE MASS; GATE CURRENT; GATE-LEAKAGE CURRENT; III-V COMPOUND SEMICONDUCTOR; INAS; INVERSION PHENOMENA; LOW LEAKAGE; LOW POWER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOS-FET; RESPONSE TIME OF MINORITY CARRIER; STRONG INVERSION;

ALUMINUM; CAPACITANCE; CAPACITORS; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES;

SEMICONDUCTING INDIUM;

EID: 71549156244     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.09.033     Document Type: Article

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