InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 6, 2009, Pages 1394-1398

  Singisetti, Uttam ^a   Wistey, Mark A ^a,b   Burek, Gregory J ^a   Arkun, Erdem ^b   Baraskar, Ashish K ^a   Sun, Yanning ^c   Kiewra, Edward W ^c   Thibeault, Brian J ^a   Gossard, Arthur C ^a,b   Palmstrøm, Chris J ^a,b   Rodwell, Mark J W ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; DRIVE CURRENTS; DRY-ETCH; ELECTRON EFFECTIVE MASS; GATE STACKS; HIGH ELECTRON VELOCITY; HIGH-TEMPERATURE GROWTH; IN-SITU; INALAS; LOW GROWTH TEMPERATURE; MOCVD; MOLYBDENUM CONTACT; MOS-FET; MOSFET PROCESS; MOSFETS; NODE TECHNOLOGY; RE-GROWTH; SELF-ALIGNED; SOURCE RESISTANCE; SOURCE/DRAIN REGIONS;

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); MOLYBDENUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SILICON WAFERS; SURFACE CLEANING;

MOSFET DEVICES;

EID: 68249143528     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881532     Document Type: Conference Paper

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