Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization

Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

  Zhang, Xingui ^a   Guo, Huaxin ^a   Lin, Hau Yu ^b   Ivana, ^a   Gong, Xiao ^a   Zhou, Qian ^a   Lin, You Ru ^b   Ko, Chih Hsin ^b   Wann, Clement H ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT METALLIZATION; DIRECT REACTIONS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METALLIZATION PROCESS; NMOSFETS; OFF-STATE CURRENT; OFF-STATE LEAKAGE CURRENT; SALICIDES; SATURATION REGION; SELF-ALIGNED; SI-DOPING;

FIELD EFFECT TRANSISTORS; METALLIZING; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

SEMICONDUCTING SILICON;

EID: 79952524101     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3559754     Document Type: Article

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