InP/InGaAs composite metal-oxide-semiconductor field-effect transistors with regrown source and Al2O3 gate dielectric exhibiting maximum drain current exceeding 1.3ma/μm

Applied Physics Express

Volumn 4, Issue 5, 2011, Pages

  Terao, Ryousuke ^a   Kanazawa, Toru ^a   Ikeda, Shunsuke ^a   Yonai, Yoshiharu ^a   Kato, Atsushi ^a   Miyamoto, Yasuyuki ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; COMPOSITE CHANNEL; DIELECTRIC/SEMICONDUCTOR INTERFACE; DRAIN VOLTAGE; GATE VOLTAGES; INP/INGAAS; MAXIMUM DRAIN CURRENT; METAL-ORGANIC VAPOR PHASE EPITAXY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; SOURCE/DRAIN REGIONS; SUBTHRESHOLD SLOPE;

DIELECTRIC DEVICES; DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); ION BEAMS; MOSFET DEVICES;

TRANSISTORS;

EID: 79956086827     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.054201     Document Type: Article

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