III-V MOSFETs with a new self-aligned contact

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 233-234

  Zhang, Xingui ^a   Guo, Huaxin ^a   Ko, Chih Hsin ^b   Wann, Clement H ^b   Cheng, Chao Ching ^b   Lin, Hau Yu ^b   Chin, Hock Chun ^a   Gong, Xiao ^a   Lim, Phyllis Shi Ya ^a   Luo, Guang Li ^c   Chang, Chun Yen ^d   Chien, Chao Hsin ^c,d   Han, Zong You ^d   Huang, Shih Chiang ^c   Yeo , Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS PROCESSS; CONTACT TECHNOLOGIES; GAAS; METALLIZATION PROCESS; MOSFETS; NICKEL GERMANOSILICIDE; NMOSFETS; SALICIDES; SELF-ALIGNED; SOURCE AND DRAINS;

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; MOSFET DEVICES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM;

GALLIUM ARSENIDE;

EID: 77957886344     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556240     Document Type: Conference Paper

References (5)

1. Chau et al., IEEE Trans. Nanotechnol. vol. 4, pp. 153, 2005.
2. Y. Sun et al., IEDM Tech. Dig., pp. 367, 2008.
3. D. Athanasions et al., MRS Bulletin, vol. 34, no. 7, pp. 522, 2009.
4. H.-C. Chin et al., IEDM, Tech. Dig., pp. 383, 2008.
5. Y. Bai et al., J. Appl. Phys., vol. 104, 084518, 2008.